KV Electronics Gate Drive Transformers provide reliable galvanic isolation and deliver high-peak-current driving signals to the gates of power MOSFETs and IGBTs in half-bridge, full-bridge, and push-pull converter topologies. Designed with a small number of turns (5–30 turns) to minimize stray inductance and achieve fast rise/fall times, these transformers ensure precise control signal transfer even at high switching frequencies.

Available in EE, RM, ETD, and pot core formats with multiple secondary windings for driving multiple switches simultaneously. Custom impedance matching and duty cycle correction networks are available on request.

Key Features

• Turns: 5–30 (primary); custom ratios
• Multiple secondaries for multi-switch drive
• Low leakage inductance; fast switching transitions
• Isolation: 1.5kV – 4kV (depending on topology)
• Switching frequency: 10kHz – 1MHz
• Core: EE, RM, ETD, pot-core ferrite
• Through-hole and SMD packages available

Applications

• Half-bridge and full-bridge SMPS
• Motor drives and inverters
• UPS systems
• Industrial servo drives
• DC-DC converters with active rectification